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1N5709B ABRUPT VARACTOR DIODE

1N5709B Description

1N5709B ABRUPT VARACTOR DIODE PACKAGE STYLE DO-7 .
The ASI 1N5709B is an Abrupt Varactor Diode, designed for general purpose www.

1N5709B Applications

* MAXIMUM RATINGS IR VR PDISS TJ TSTG θJC 20 nA 70 V 400 mW @ TA = 25 °C -65 °C to +175 °C -65 °C to +200 °C 250 °C/W NONE CHARACTERISTICS SYMBOL VBR IR CT CT4/CT60 Q IR = 10 µA VR = 60 V TC = 25 °C TEST CONDITIONS MINIMUM 65 TYPICAL MAXIMUM 20 UNITS V nA µA pF
* - TA = 150 °C VR = 4

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Datasheet Details

Part number
1N5709B
Manufacturer
Advanced Semiconductor
File Size
38.59 KB
Datasheet
1N5709B_AdvancedSemiconductor.pdf
Description
ABRUPT VARACTOR DIODE

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ABRUPT VARACTOR DIODE Advanced Semiconductor
Advanced Semiconductor 1N5709B-like datasheet