Datasheet4U Logo Datasheet4U.com

1N5709B Datasheet - Advanced Semiconductor

1N5709B ABRUPT VARACTOR DIODE

The ASI 1N5709B is an Abrupt Varactor Diode, designed for general purpose www.DataSheet4U.com applications. MAXIMUM RATINGS IR VR PDISS TJ TSTG θJC 20 nA 70 V 400 mW @ TA = 25 °C -65 °C to +175 °C -65 °C to +200 °C 250 °C/W NONE CHARACTERISTICS SYMBOL VBR IR CT CT4/CT60 Q IR = 10 µA VR = 60 V T.

1N5709B_AdvancedSemiconductor.pdf

Preview of 1N5709B PDF

Datasheet Details

Part number:

1N5709B

Manufacturer:

Advanced Semiconductor

File Size:

38.59 KB

Description:

Abrupt varactor diode.

📁 Related Datasheet

1N5709 GENERAL PURPOSE ABRUPT VARACTOR DIODES (Knox SemiconductorInc)

1N5709 Silicon Abrupt Varactors (Aeroflex)

1N5700 GENERAL PURPOSE ABRUPT VARACTOR DIODES (Knox SemiconductorInc)

1N5700 Silicon Abrupt Varactors (Aeroflex)

1N5701 GENERAL PURPOSE ABRUPT VARACTOR DIODES (Knox SemiconductorInc)

1N5701 Silicon Abrupt Varactors (Aeroflex)

1N5702 GENERAL PURPOSE ABRUPT VARACTOR DIODES (Knox SemiconductorInc)

1N5702 Silicon Abrupt Varactors (Aeroflex)

TAGS

1N5709B 1N5709B ABRUPT VARACTOR DIODE Advanced Semiconductor

1N5709B Distributor