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2N3570 - NPN SILICON HIGH FREQUENCY TRANSISTOR

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Description

The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications.

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Datasheet Details

Part number 2N3570
Manufacturer Advanced Semiconductor
File Size 16.44 KB
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
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2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. MAXIMUM RATINGS IC VCB VCE VEB PDISS TJ TSTG θJC O O PACKAGE STYLE TO- 72 50 mA 30 V 15 V 3.0 V 200 mW @ TC = 25 C -65 C to +200 C -65 C to +200 C 500 C/W O O O O 1 = EMITTER 3 = COLLECTOR 2 = BASE 4 = CASE CHARACTERISTICS SYMBOL BVCEO BVCBO ICBO BVEBO hFE Cob hFE hfe rb´CC POSC NF IC = 2 mA IC = 1.0 µA VCB = 6.0 V TC = 25 C O NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 15 30 10 TA = 150 C O UNITS V V µA V 1.0 3.0 20 150 0.75 20 150 4.25 5 60 6 7 6 8 3.75 1 --pF ----pF mW dB IE = 10 µA VCE = 6.
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