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2N5583

PNP Silicon High Frequency Transistor

2N5583 General Description

The 2N5583 is Designed for High Frequency Amplifier, and Non Saturated Switching Applications. PACKAGE STYLE MAXIMUM RATINGS IC VCE PDISS TJ TSTG θJC 500 mA -30 V 1.0 W @ TA = 25 °C 5.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 350 °C/W CHARACTERISTICS SYMBOL BVCEO BVCBO BVEBO ICBO IEBO.

2N5583 Datasheet (45.77 KB)

Preview of 2N5583 PDF

Datasheet Details

Part number:

2N5583

Manufacturer:

Advanced Semiconductor

File Size:

45.77 KB

Description:

Pnp silicon high frequency transistor.

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TAGS

2N5583 PNP Silicon High Frequency Transistor Advanced Semiconductor

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