2N5070 NPN Silicon RF Power Transistor

Advanced Semiconductor

Description

( DataSheet : www.DataSheet4U.com ) 2N5070 NPN SILICON RF POWER TRANSISTOR .
The ASI 2N5070 is Designed for High Power Linear Amplifier Application in the 2. Emitter Ballasted.

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Datasheet Specifications

Part number: 2N5070
Manufacturer: Advanced Semiconductor
File Size: 79.39 KB
Datasheet: 2N5070_AdvancedSemiconductor.pdf
Description: NPN Silicon RF Power Transistor

Features

* INCLUDE:
* Emitter Ballasted
* Common Emitter Package MAXIMUM RATINGS 3.3 A IC 10 A (PEAK) VCE PDISS TSTG θJC 30 V 70 W @ TC = 25 OC -65 OC to +200 OC 2.5 OC/W PACKAGE STYLE TO- 60 1 = EMITTER 2 = BASE 3 = COLLECTOR CASE = EMITTER CHARACTERISTICS TC = 25 OC SYMBOL TEST CON

2N5070 Distributors

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2N5070 NPN Silicon Power Transistor Advanced Semiconductor

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