ASI2001 Datasheet, Transistor, Advanced Semiconductor

ASI2001 Features

• Transistor
• PG = 10 dB min. at 1.0 W/ 2,000 MHz
• Hermetic Microstrip Package
• Omnigold™ Metalization System DIM A L G H J F I K P MN MINIMUM inches / mm MAXIMUM in

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ASI2001

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Advanced Semiconductor

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📄 Datasheet

Description:

Npn silicon rf power transistor. The ASI 2001 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. B PACKAGE STYLE .250 2L FLG A ØD

ASI2001 Application

• Applications up to 2300 MHz. B PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER FEATURES:
• PG = 10 dB min. at 1.0 W/ 2,000 MHz

TAGS

ASI2001

Advanced Semiconductor

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