ASI2010 Datasheet, Transistor, Advanced Semiconductor

ASI2010 Features

• Transistor
• PG = 5 dB min. at 10 W/ 2,000 MHz
• Hermetic Microstrip Package
• Omnigold™ Metalization System L G H J F I K M NP DIM A B MINIMUM inches / mm MAXIMUM i

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Part number:

ASI2010

Manufacturer:

Advanced Semiconductor

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18.29kb

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📄 Datasheet

Description:

Npn silicon rf power transistor. The ASI 2010 is Designed for General Purpose Class C Power Amplifier Applications up to 2300 MHz. PACKAGE STYLE .250 2L FLG A ØD C

ASI2010 Application

• Applications up to 2300 MHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER B FEATURES:
• PG = 5 dB min. at 10 W/ 2,000 MHz
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