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AT12016-21

SILICON ABRUPT VARACTOR DIODE

AT12016-21 Features

* INCLUDE:

* High Quality Factor, Q = 300 MIN. CP = .20 pF

* Hermetic Pkg, LS = .42 nH

* High Tuning Ratio, ∆CT = 9.0 MIN. MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W NONE O O O O CHARACTERISTICS SYMBOL VR V

AT12016-21 Datasheet (48.44 KB)

Preview of AT12016-21 PDF

Datasheet Details

Part number:

AT12016-21

Manufacturer:

Advanced Semiconductor

File Size:

48.44 KB

Description:

Silicon abrupt varactor diode.

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TAGS

AT12016-21 SILICON ABRUPT VARACTOR DIODE Advanced Semiconductor

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