AT12017-21 Datasheet - Advanced Semiconductor

AT12017-21, SILICON ABRUPT VARACTOR DIODE

www.DataSheet4U.com AT12017-21 SILICON ABRUPT VARACTOR DIODE .
The AT12017-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic.

Features

* INCLUDE:
* High Tuning Ratio, ∆CT = 9.5 MIN.
* High Quality Factor, Q = 300 MIN.
* Hermetic Package, CP = .20 pF LS = .42 nH MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W O O O O CHARACTERISTICS SYMBOL VR VF

AT12017-21_AdvancedSemiconductor.pdf