AT12017-21 Datasheet, Diode, Advanced Semiconductor

AT12017-21 Features

• Diode INCLUDE:
• High Tuning Ratio, ∆CT = 9.5 MIN.
• High Quality Factor, Q = 300 MIN.
• Hermetic Package, CP = .20 pF LS = .42 nH MAXIMUM RATINGS IF VR PDISS TJ TSTG

PDF File Details

Part number:

AT12017-21

Manufacturer:

Advanced Semiconductor

File Size:

48.44kb

Download:

📄 Datasheet

Description:

Silicon abrupt varactor diode. The AT12017-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristi

AT12017-21 Application

• Applications Requiring an Abrupt Variable Capacitance Characteristic. PACKAGE STYLE 21 FEATURES INCLUDE:
• High Tuning Ratio, ∆CT = 9.5 MIN

TAGS

AT12017-21

Advanced Semiconductor

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