BAM80
Advanced Semiconductor
13.88kb
Npn silicon rf power transistor. The ASI BAM80 is Designed for VHF AM power amplifier Applications in the range of 100 to 150 MHz. PACKAGE STYLE .380 4L STUD .112x4
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BAM120 - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
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BAM120
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BAM120 is Designed to operate in a collector modulated VHF
Power Am.
BAM20 - 20 WATTS - 27 VOLTS 100-160 MHz
(ETC)
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BAM40 - RF POWER AMP TRANSISTOR
(Bharat Electronics)
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DataShe
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DataSheet 4 U .
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BA-1.5W-K - MINIATURE RELAY
(Fujitsu)
MINIATURE RELAY
2 POLES—1 to 2 A (FOR SIGNAL SWITCHING)
BA SERIES
s FEATURES
q q q
q q q q q q
Slim type relay for high density mounting CSA recog.
BA-10D1UD - LED LIGHT BAR & BAR GRAPH ARRAYS
(ETC)
Part No. Digit Size Common Anode Common Cathode
Chip Material/Emitted Color GaAsP/Red GaP/ Bright Red GaP/ Green GaAsP/GaP/ Yellow GaAsP/GaP/ Hi-Eff..
BA-10E1UD - LED LIGHT BAR & BAR GRAPH ARRAYS
(ETC)
Part No. Digit Size Common Anode Common Cathode
Chip Material/Emitted Color GaAsP/Red GaP/ Bright Red GaP/ Green GaAsP/GaP/ Yellow GaAsP/GaP/ Hi-Eff..
BA-10G1UD - LED LIGHT BAR & BAR GRAPH ARRAYS
(ETC)
Part No. Digit Size Common Anode Common Cathode
Chip Material/Emitted Color GaAsP/Red GaP/ Bright Red GaP/ Green GaAsP/GaP/ Yellow GaAsP/GaP/ Hi-Eff..
BA-10H1UD - LED LIGHT BAR & BAR GRAPH ARRAYS
(ETC)
Part No. Digit Size Common Anode Common Cathode
Chip Material/Emitted Color GaAsP/Red GaP/ Bright Red GaP/ Green GaAsP/GaP/ Yellow GaAsP/GaP/ Hi-Eff..
BA-10R1UD - LED LIGHT BAR & BAR GRAPH ARRAYS
(ETC)
Part No. Digit Size Common Anode Common Cathode
Chip Material/Emitted Color GaAsP/Red GaP/ Bright Red GaP/ Green GaAsP/GaP/ Yellow GaAsP/GaP/ Hi-Eff..
BA-10S1UD - LED LIGHT BAR & BAR GRAPH ARRAYS
(ETC)
Part No. Digit Size Common Anode Common Cathode
Chip Material/Emitted Color GaAsP/Red GaP/ Bright Red GaP/ Green GaAsP/GaP/ Yellow GaAsP/GaP/ Hi-Eff..