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BAM80

NPN SILICON RF POWER TRANSISTOR

BAM80 Features

* Common Emitter

* PG = 6.0 dB at 20 W/150 MHz

* Omnigold™ Metalization System B C E ØC E B D H I J MAXIMUM RATINGS IC VCES VCEO VEBO PDISS TJ TSTG θJC 8.5 A 60 V 35 V 4.0 V 85 W -65 °C to +200 °C -65 °C to +200 °C 2.0 °C/W DIM A B C D E F G H I J #8-32 UNC-2A F E G

BAM80 Datasheet (13.88 KB)

Preview of BAM80 PDF

Datasheet Details

Part number:

BAM80

Manufacturer:

Advanced Semiconductor

File Size:

13.88 KB

Description:

Npn silicon rf power transistor.

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BAM80 NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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