HF8-28F Datasheet, Transistor, Advanced Semiconductor

✔ HF8-28F Features

PG = 21 dB min. at 8 W/30 MHz
IMD3 = -30 dBc max. at 8 W (PEP)
Omnigold™ Metalization System B .112 x 45° A E B C E C D E Ø.125 NOM. FULL R J .125 MAXIMUM RATI

PDF File Details

Advanced Semiconductor manufacturer logo

Part number:

HF8-28F

Manufacturer:

Advanced Semiconductor

File Size:

18.31 KB

Download:

📄 Datasheet

Description:

Npn silicon rf power transistor. The ASI HF8-28F is Designed for PACKAGE STYLE .380 4L FLG FEATURES: * PG = 21 dB min. at 8 W/30 MHz * IMD3 = -30 dBc max. at 8 W (P

📥 Download PDF (18.31 KB)

📁 Related Datasheet

HF8-28S - NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)

HF8 - SUBMINIATURE POWER RELAY (Hongfa Technology)

HF84F - HIGH POWER RELAY (Hongfa Technology)

HF8509 - HIGH POWER LATCHING RELAY (ETC)

HF8565 - MOTOR START POTENTIAL RELAY (Hongfa Technology)

HF-102 - Wideband RF/Pulse Transformer (Sirenza Microdevices)

HF-110 - (HF-110 / HF-122) Wideband RF/Pulse Transformer (Sirenza Microdevices)

HF-112 - Wideband RF/Pulse Transformer (Sirenza Microdevices)

TAGS

HF8-28F NPN SILICON POWER TRANSISTOR Advanced Semiconductor