HF8-28S NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor

Description

HF8-28S NPN SILICON RF POWER TRANSISTOR .
The ASI HF8-28S is Designed for PACKAGE STYLE . PG = 21 dB min. IMD3 = -30 dBc max.

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Datasheet Specifications

Part number: HF8-28S
Manufacturer: Advanced Semiconductor
File Size: 17.59 KB
Datasheet: HF8-28S_AdvancedSemiconductor.pdf
Description: NPN SILICON RF POWER TRANSISTOR

Features

* PG = 21 dB min. at 8 W/30 MHz
* IMD3 = -30 dBc max. at 8 W (PEP)
* Omnigold™ Metalization System .112x45° A B C E ØC E B H I J MAXIMUM RATINGS IC VCBO VCEO VCES VEBO PDISS TJ T STG θ JC O O D 1.0 A 65 V 35 V 65 V 4.0 V 13.0 W @ TC = 25 C -65 C to +200 C -65 C to +150

HF8-28S Distributors

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HF8-28S NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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