MSC8001 High Power GaAs FET

Advanced Semiconductor

Description

MSC8001 HIGH POWER GaAs FET .

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Datasheet Specifications

Part number: MSC8001
Manufacturer: Advanced Semiconductor
File Size: 17.13 KB
Datasheet: MSC8001_AdvancedSemiconductor.pdf
Description: High Power GaAs FET

Features

* INCLUDE:
* 27.5 dBm Output Power with 7db Associated Gain at 8 GHz Power Optimized Design Provides High Power-added Efficiency Large Cross Section Ti/Pt/Au Gates Enhance Durability and Reliability Chip Devices are Selected from Standard Military Grade Wafers Hermetic Metal/Ceramic Package S

Applications

* Custom Electrical Test and Screening Available for Source Control Drawings
* FET PACKAGE TYPE 30
* TRANS1.SYM RF ELECTRICAL SPECIFICATIONS SYMBOL MAG PMAG FREQUENCY MAX AVAILABLE GAIN TA = 25 C O TEST CONDITIONS = 8.0 GHz MINIMUM TYPICAL MAXI

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High Power GaAs FET Advanced Semiconductor

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MSC8004