MSC8004 HIGH POWER GaAs FET

Advanced Semiconductor

Description

MSC8004 HIGH POWER GaAs FET .

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Datasheet Specifications

Part number: MSC8004
Manufacturer: Advanced Semiconductor
File Size: 44.19 KB
Datasheet: MSC8004_AdvancedSemiconductor.pdf
Description: HIGH POWER GaAs FET

Features

* INCLUDE:
* FET PACKAGE TYPE 30 High Output Power: P1dB = 1.6 W (TYP) @ 12 GHz High power gain: GLP = 5 dB (TYP) @ 12 GHz High power added efficiency: Hadd = 18% (TYP) @ 12 GHz
* www. DataSheet4U. com

Applications

* S to Ku Band Power Amplifiers TRANS1.SYM ELECTRICAL SPECIFICATIONS SYMBOL IDDS VGS (off) VDS = 3.0 V VDS = 3.0 V TA = 25 C O TEST CONDITIONS SATURATED DRAIN CURRENT MINIMUM TYPICAL MAXIMUM 850 -2 1100 -3 1400 -5 UNITS mA V VGS = 0 V ID = 1.0 mA GATE TO SOURCE CUT-OFF VOLTAGE A D

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HIGH POWER GaAs FET Advanced Semiconductor

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