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TRW53601 Datasheet - Advanced Semiconductor

TRW53601 - NPN SILICON RF POWER TRANSISTOR

TRW53601 Features

* Diffused Ballast Resistors

* Omnigold™ Metalization System

* Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C DataSheet4U.com DataShee -65 °C to +200 °C 31 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS

TRW53601_AdvancedSemiconductor.pdf

Preview of TRW53601 PDF

Datasheet Details

Part number:

TRW53601

Manufacturer:

Advanced Semiconductor

File Size:

208.46 KB

Description:

Npn silicon rf power transistor.

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