TRW53601 Datasheet, Power Transistor, Advanced Semiconductor

Npn silicon rf power transistor

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Part number:

TRW53601

Manufacturer:

Advanced Semiconductor

File Size:

208.46 KB

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📄 Download the TRW53601 Datasheet PDF

Description:

Npn silicon rf power transistor.

The ASI TRW53601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz.

PACKAGE STYLE

FEATURES:
* Dif.

✔ TRW53601 Features

Diffused Ballast Resistors
Omnigold™ Metalization System
Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C

✔ TRW53601 Application

up to 2.3 GHz. PACKAGE STYLE FEATURES:
Diffused Ballast Resistors
Omnigold™ Metalization System
Comm

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TAGS

TRW53601 NPN SILICON POWER TRANSISTOR Advanced Semiconductor