Part number:
TRW53601
Manufacturer:
Advanced Semiconductor
File Size:
208.46 KB
Description:
Npn silicon rf power transistor.
TRW53601_AdvancedSemiconductor.pdf
Datasheet Details
TRW53601 Features
* Diffused Ballast Resistors
* Omnigold™ Metalization System
* Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C DataSheet4U.com DataShee -65 °C to +200 °C 31 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE CHARACTERISTICS
TRW53601_AdvancedSemiconductor.pdf
Datasheet Details
TRW53601
Advanced Semiconductor
208.46 KB
Npn silicon rf power transistor.
📁 Related Datasheet
📌 All Tags