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TRW54601 Datasheet - Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

TRW54601 Features

* Diffused Ballast Resistors

* Omnigold™ Metalization System

* Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 35 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE DataShee DataSheet4U.com CHARACTERISTICS

TRW54601 Datasheet (206.52 KB)

Preview of TRW54601 PDF

Datasheet Details

Part number:

TRW54601

Manufacturer:

Advanced Semiconductor

File Size:

206.52 KB

Description:

Npn silicon rf power transistor.

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TAGS

TRW54601 NPN SILICON POWER TRANSISTOR Advanced Semiconductor

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