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TRW54601 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz.

Key Features

  • Diffused Ballast Resistors.
  • Omnigold™ Metalization System.
  • Common Emitter.

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Datasheet Details

Part number TRW54601
Manufacturer Advanced Semiconductor
File Size 206.52 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet TRW54601 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com TRW54601 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz. PACKAGE STYLE .280 4L STUD FEATURES: • Diffused Ballast Resistors • Omnigold™ Metalization System • Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 35 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE DataShee DataSheet4U.com CHARACTERISTICS SYMBOL BVCEO BVCES BVEBO ICBO hFE COB PG VSRW IC = 10 mA IC = 10 mA IE = 1.0 mA VCB = 28 V VCE = 5.0 V VCB = 28 V TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM 22 50 3.5 0.5 UNITS V V V mA --- IC = 100 mA f = 1.0 MHz IC = 120 mA f = 2.3 GHz 20 2.4 8.5 9.5 30:0 3.0 pF dB --- VCE = 20 V POUT = 0.