Part number:
TRW54601
Manufacturer:
Advanced Semiconductor
File Size:
206.52 KB
Description:
Npn silicon rf power transistor.
* Diffused Ballast Resistors
* Omnigold™ Metalization System
* Common Emitter MAXIMUM RATINGS IC VCES PDISS TJ TSTG θJC 400 mA 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 35 °C/W 1 = COLLECTOR 2 = EMITTER 3 = BASE DataShee DataSheet4U.com CHARACTERISTICS
TRW54601 Datasheet (206.52 KB)
TRW54601
Advanced Semiconductor
206.52 KB
Npn silicon rf power transistor.
📁 Related Datasheet
TRW53601 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
TRW-24L01 2.4G ISM Transceiver (WENSHING)
TRW3005 NPN SILICON RF POWER TRANSISTOR (Advanced Semiconductor)
TRWL02 Wire Wound Chip Ceramic Inductor (Token)
TRWL03 Wire Wound Chip Ceramic Inductor (Token)
TRWL05 Wire Wound Chip Ceramic Inductor (Token)
TRWL06 Wire Wound Chip Ceramic Inductor (Token)
TRWL08 Wire Wound Chip Ceramic Inductor (Token)
TR-10025-PC Current SenseTransformers (INDUCTIVE)
TR-20025-PC Current SenseTransformers (INDUCTIVE)