TRW53601
TRW53601 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI TRW53601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz.
PACKAGE STYLE
FEATURES
:
- Diffused Ballast Resistors
- Omnigold™ Metalization System
- mon Emitter
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 400 m A 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C
.
Data Shee
-65 °C to +200 °C 31 °C/W
1 = COLLECTOR 2 = EMITTER 3 = BASE
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVCBO BVEBO ICBO h FE COB PO IMD GP VSWR IC = 10 m A IC = 10 m A
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
20 50 45 3.5 0.25
UNITS
V V V V m A --p F W d B d B
IC = 1.0 m A IE = 250 µA VCB = 28 V VCE = 5.0 V VCB = 28 V VCE = 20 V PIN = .100 W IE = 120 m A IC = 100 m A f = 1.0 MHz f = 2.0 GHz
120 3.5
.8 -30 8.5 ∞ 9.5
.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1200
- FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
Data Sheet 4 U...
