TRW54601
TRW54601 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION
:
The ASI TRW54601 is Designed for General Purpose Oscillator Applications up to 2.3 GHz.
PACKAGE STYLE .280 4L STUD
FEATURES
:
- Diffused Ballast Resistors
- Omnigold™ Metalization System
- mon Emitter
MAXIMUM RATINGS
IC VCES PDISS TJ TSTG θJC 400 m A 50 V 3.0 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 35 °C/W
1 = COLLECTOR 2 = EMITTER 3 = BASE
Data Shee
.
CHARACTERISTICS
SYMBOL
BVCEO BVCES BVEBO ICBO h FE COB PG VSRW IC = 10 m A IC = 10 m A IE = 1.0 m A VCB = 28 V VCE = 5.0 V VCB = 28 V
TC = 25 °C
NONETEST CONDITIONS
MINIMUM TYPICAL MAXIMUM
22 50 3.5 0.5
UNITS
V V V m A ---
IC = 100 m A f = 1.0 MHz IC = 120 m A f = 2.3 GHz
20 2.4 8.5 9.5 30:0 3.0 p F d B ---
VCE = 20 V POUT = 0.5 W
.
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
- NORTH HOLLYWOOD, CA 91605
- (818) 982-1200
- FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
1/1
Data Sheet 4 U...
