• Part: TRW3005
  • Description: NPN SILICON RF POWER TRANSISTOR
  • Category: Transistor
  • Manufacturer: Advanced Semiconductor
  • Size: 15.63 KB
Download TRW3005 Datasheet PDF
Advanced Semiconductor
TRW3005
TRW3005 is NPN SILICON RF POWER TRANSISTOR manufactured by Advanced Semiconductor.
DESCRIPTION : The ASI TRW3005 is Designed for General Purpose Class C Power Amplifier Applications up to 3500 MHz. PACKAGE STYLE .250 2L FLG A ØD C E .060 x 45° CHAMFER FEATURES : - PG = 4.5 d B min. at 5 W / 3,000 MHz - Hermetic Microstrip Package - Omnigold™ Metalization System DIM A L F I K M NP MINIMUM inches / mm MAXIMUM inches / mm .028 / 0.71 .740 / 18.80 .245 / 6.22 .128 / 3.25 .125 / 3.18 .110 / 2.79 .117 / 2.97 .560 / 14.22 .790 / 20.07 .225 / 5.72 .165 / 4.19 .003 / 0.08 .058 / 1.47 .119 / 3.02 .149 / 3.78 .032 / 0.81 MAXIMUM RATINGS IC VCC PDISS TJ TSTG θJC 700 m A 30 V 17.6 W @ TC = 25 °C -65 °C to +200 °C -65 °C to +200 °C 8.5 °C/W B C D E F G H I J K L M N P .255 / 6.48 .132 / 3.35 .117 / 2.97 .570 / 14.48 .810 / 20.57 .235 / 5.97 .185 / 4.70 .007 / 0.18 .068 / 1.73 .135 / 3.43 .187 / 4.75 CHARACTERISTICS SYMBOL BVCBO BVCER BVEBO ICBO h FE Cob PG ηC TC = 25 °C NONETEST CONDITIONS IC = 1.0 m A IC = 5.0 m A IE = 10 m A VCB = 28 V VCE = 5.0 V VCB = 28 V VCC = 28 V POUT = 5.0 W IC = 500 m A f = 1.0 MHz f = 3.0 GHz RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 45 45 3.5 0.5 300 300 7.5 4.5 30 UNITS V V V m A --p F d B % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE - NORTH HOLLYWOOD, CA 91605 - (818) 982-1200 - FAX (818) 765-3004 Specifications are subject to change without...