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APTGU30H120T3 Full bridge

APTGU30H120T3 Description

APTGU30H120T3 www.DataSheet4U.com Full - Bridge PT IGBT Power Module 13 14 Q1 18 19 Q3 11 10 VCES = 1200V IC = 30A @ Tc = 80°C Application *.

APTGU30H120T3 Features

* Power MOS 7® Punch Through (PT) IGBT - Low conduction loss - Ultra fast tail current shutoff - Low gate charge - Switching frequency capability in the 200kHz range - Soft recovery parallel diodes - Low diode VF
* Kelvin emitter for easy drive
* Very low stray inductance - S

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