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1N5819W Datasheet

Manufacturer: AiT Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

1N5819W datasheet preview

Datasheet Details

Part number 1N5819W
Datasheet 1N5819W 1N5817W Datasheet (PDF)
File Size 309.37 KB
Manufacturer AiT Semiconductor
Description SCHOTTKY DIODES
1N5819W page 2 1N5819W page 3

1N5819W Overview

The 1N5817W~1N5819W are available in SOD123FL package. ORDERING INFORMATION Package Type Part Number 1N5817W SOD-123FL 1N5818W 1N5819W Note SPQ: 3,000pcs/Reel AiT provides all RoHS pliant Products.

1N5819W Key Features

  • Metal silicon junction, majority carrier conduction
  • Guarding for overvoltage protection
  • Low power loss, high efficiency
  • High current capability
  • low forward voltage drop
  • High surge capability
  • For use in low voltage, high frequency

1N5819W from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
CHINA BASE 1N5819W 1A Surface Mount Schottky Barrier Diode CHINA BASE
JGD Logo 1N5819W Surface Mount Schottky Barrier Rectifiers JGD
Kexin Logo 1N5819W Schottky Barrier Diodes Kexin
SEMTECH Logo 1N5819W Surface Mount Schottky Barrier Rectifier SEMTECH
Sangdest Microelectronics Logo 1N5819W SCHOTTKY BARRIER DIODE Sangdest Microelectronics
AiT Semiconductor logo - Manufacturer

More Datasheets from AiT Semiconductor

See all AiT Semiconductor datasheets

Part Number Description
1N5817W SCHOTTKY DIODES
1N5818W SCHOTTKY DIODES

1N5819W Distributor

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