Part number:
2SC3356L
Manufacturer:
AiT Semiconductor
File Size:
312.78 KB
Description:
Npn transistor.
2SC3356L Datasheet (312.78 KB)
* High gain:︱S21E︱2 TYP. Value is 12dB @VCE=10V, IC=30mA, f=1GHz
* Low noise: NF TYP. Value is 1.5dB @VCE=10V, IC=7mA, f=1GHz
* fT (TYP.) : TYP. Value is 8GHz @VCE=10V, IC=30mA
* Ultra high frequency low noise transistor
* Silicon epitaxial bipolar process.
* High power gain,
2SC3356L Datasheet (312.78 KB)
2SC3356L
AiT Semiconductor
312.78 KB
Npn transistor.
📁 Related Datasheet
2SC3356 - NPN Silicon Transistor
(NEC)
DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3356 is an NPN s.
2SC3356 - NPN SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER
3
3
DESCRIPTION
The UTC 2SC3356 is an NPN sil.
2SC3356 - NPN Transistor
(Kexin)
SMD Type
NPN Silicon Epitaxial Transistor 2SC3356
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
NF = 1.1 dB Typ., Ga.
2SC3356 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3356
DESCRIPTION ·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC .
2SC3356 - NPN Transistor
(SeCoS)
Elektronische Bauelemente
2SC3356
NPN Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen and lead fre.
2SC3356 - NPN Silicon RF Transistor
(Renesas)
PreliminaryData Sheet
2SC3356
R09DS0021EJ0300
NPN Silicon RF Transistor
Rev.3.00
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Ampl.
2SC3356F - NPN Transistor
(SeCoS Halbleitertechnologie GmbH)
..
2SC3356F
NPN Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifie.
2SC3356L - NPN SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
HIGH FREQUENCY LOW NOISE
AMPLIFIER
3
3
DESCRIPTION
The UTC 2SC3356 is designed .
