* Low noise amplifier at VHF, UHF and CATV band. Low Noise and High Gain High Power Gain 2 Emitter A 3 L 3 Collector 3 Top View 1 2 C B 1 2 K E D 1 MARKING R = hFE Coding Base F G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H J REF. A B C D E F R
2SC3356F Datasheet (379.64 KB)
2SC3356F
SeCoS Halbleitertechnologie GmbH
379.64 KB
Npn transistor.
www.DataSheet4U.com
2SC3356F
NPN Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product A suffix of “-C” specifie.
📁 Related Datasheet
2SC3356 - NPN Silicon Transistor
(NEC)
DATA SHEET SHEET DATA
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3356 is an NPN s.
2SC3356 - NPN SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
HIGH FREQUENCY LOW NOISE AMPLIFIER
3
3
DESCRIPTION
The UTC 2SC3356 is an NPN sil.
2SC3356 - NPN Transistor
(Kexin)
SMD Type
NPN Silicon Epitaxial Transistor 2SC3356
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Transistors
Unit: mm
Features
+0.1 2.4-0.1
NF = 1.1 dB Typ., Ga.
2SC3356 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN RF Transistor
INCHANGE Semiconductor
2SC3356
DESCRIPTION ·Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC .
2SC3356 - NPN Transistor
(SeCoS)
Elektronische Bauelemente
2SC3356
NPN Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen and lead fre.
2SC3356 - NPN Silicon RF Transistor
(Renesas)
PreliminaryData Sheet
2SC3356
R09DS0021EJ0300
NPN Silicon RF Transistor
Rev.3.00
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Ampl.
2SC3356L - NPN TRANSISTOR
(AiT Semiconductor)
AiT Semiconductor Inc.
.ait-ic.
2SC3356L
GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR
DESCRIPTION
The 2SC3356L is available in SOT-23 .
2SC3356L - NPN SILICON TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SC3356
NPN SILICON TRANSISTOR
HIGH FREQUENCY LOW NOISE
AMPLIFIER
3
3
DESCRIPTION
The UTC 2SC3356 is designed .
