AM8958 N+P PAIR ENHANCEMENT MODE MOSFET

AiT Semiconductor

Description

AiT Semiconductor Inc.www.ait-ic.com AM8958 MOSFET N+P PAIR ENHANCEMENT MODE .
FEATURES The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology.

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Datasheet Specifications

Part number: AM8958
Manufacturer: AiT Semiconductor
File Size: 529.97 KB
Datasheet: AM8958-AiTSemiconductor.pdf
Description: N+P PAIR ENHANCEMENT MODE MOSFET

Features

* The AM8958 is the N & P-Channel enhancement mode power field effect transistor using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. This device is particularly suited for low volt

Applications

* devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of death, personal injury, or servere property, or environmental damage. In order to minimize risks associate

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AM8958 N +P PAIR ENHANCEMENT MODE MOSFET AiT Semiconductor

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