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AFP1601E, AFP1601E-Alfa 20V P-Channel Enhancement Mode MOSFET

AFP1601E Description

Alfa-MOS Technology General .
AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

AFP1601E Features

* -20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: AFP1601E, AFP1601E-Alfa. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
AFP1601E, AFP1601E-Alfa
Manufacturer
Alfa-MOS
File Size
774.26 KB
Datasheet
AFP1601E-Alfa-MOS.pdf
Description
20V P-Channel Enhancement Mode MOSFET
Note
This datasheet PDF includes multiple part numbers: AFP1601E, AFP1601E-Alfa.
Please refer to the document for exact specifications by model.

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20V P-Channel Enhancement Mode MOSFET Alfa-MOS
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