AFP1601E, AFP1601E-Alfa - 20V P-Channel Enhancement Mode MOSFET

Alfa-MOS

Datasheet Details

Part number	AFP1601E, AFP1601E-Alfa
Manufacturer	Alfa-MOS
File Size	774.26 KB
Description	20V P-Channel Enhancement Mode MOSFET
Datasheet	AFP1601E-Alfa-MOS.pdf
Note	This datasheet PDF includes multiple part numbers: AFP1601E, AFP1601E-Alfa. Please refer to the document for exact specifications by model.

AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

-20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design.
in Low Battery Voltage Operation DFN1.0X0.6-3L package design.

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Published: Nov 22, 2018 |