AFP1601E Datasheet - Alfa-MOS

20V P-Channel Enhancement Mode MOSFET

AFP1601E Features

* -20V/-0.4A, RDS(ON)= 580 mΩ@ VGS =-4.5V -20V/-0.3A, RDS(ON)= 680 mΩ@ VGS =-2.5V -20V/-0.1A, RDS(ON)= 950 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection Diode design

* in Low Battery Voltage Operation DFN1.0X0.6-3L package design Application

AFP1601E General Description

AFP1601E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

AFP1601E Datasheet (774.26 KB)

AFP1601E Datasheet Preview — Preview of AFP1601E PDF

Datasheet Details

Part number:

AFP1601E

Manufacturer:

Alfa-MOS

File Size:

774.26 KB

Description:

20v p-channel enhancement mode mosfet.

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AFP1601E 20V P-Channel Enhancement Mode MOSFET Alfa-MOS

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AFP1601E Features

AFP1601E General Description

Datasheet Details

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