AFP1013E, AFP1013E-Alfa Datasheet - Alfa-MOS

AFP1013E P-Channel MOSFET

AFP1013E, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer, and low in-line power loss are needed in commercial industria.

AFP1013E Features

* -20V/-0.6A, RDS(ON)= 800 mΩ@ VGS =-4.5V -20V/-0.5A, RDS(ON)= 950 mΩ@ VGS =-2.5V -20V/-0.4A, RDS(ON)= 1250 mΩ@ VGS =-1.8V Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits ESD Protection ( >2KV ) Diode design

* in Low Battery Voltage Operation SOT-523 package design Applicat

AFP1013E-Alfa-MOS.pdf