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AFP7401S, AFP7401S-Alfa Datasheet - Alfa-MOS

AFP7401S P-Channel Enhancement Mode MOSFET

AFP7401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFP7401S Features

* -30V/-2.8A,RDS(ON)=115mΩ@VGS=-10.0V -30V/-2.5A,RDS(ON)=150mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=185mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design Application Power Management in Note book Portable E

AFP7401S-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFP7401S, AFP7401S-Alfa. Please refer to the document for exact specifications by model.
AFP7401S Datasheet Preview Page 2 AFP7401S Datasheet Preview Page 3

Datasheet Details

Part number:

AFP7401S, AFP7401S-Alfa

Manufacturer:

Alfa-MOS

File Size:

570.11 KB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP7401S, AFP7401S-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFP7401S AFP7401S-Alfa P-Channel Enhancement Mode MOSFET Alfa-MOS

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