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AFP7401S

P-Channel Enhancement Mode MOSFET

AFP7401S Features

* -30V/-2.8A,RDS(ON)=115mΩ@VGS=-10.0V -30V/-2.5A,RDS(ON)=150mΩ@VGS=-4.5V -30V/-1.5A,RDS(ON)=185mΩ@VGS=-2.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC current capability SOT-323 package design Application Power Management in Note book Portable E

AFP7401S General Description

AFP7401S, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss.

AFP7401S Datasheet (570.11 KB)

Preview of AFP7401S PDF

Datasheet Details

Part number:

AFP7401S

Manufacturer:

Alfa-MOS

File Size:

570.11 KB

Description:

P-channel enhancement mode mosfet.

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TAGS

AFP7401S P-Channel Enhancement Mode MOSFET Alfa-MOS

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