AFP8989 - 60V P-Channel MOSFET
AFP8989, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.
These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications.
Pin Descriptio
AFP8989 Features
* -60V/-3.6A,RDS(ON)= 145mΩ@VGS= -10V
* -60V/-2.6A,RDS(ON)= 155mΩ@VGS= -4.5V
* Super high density cell design for extremely low RDS (ON)
* SOT-89-3L package design Application
* Motor and Load Control
* LCD TV Inverter & AD/DC Inverter Systems.
* Backlight Inverter for L
