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AFP8995, AFP8995-Alfa Datasheet - Alfa-MOS

AFP8995 P-Channel Enhancement Mode MOSFET

AFP8995, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Descriptio.

AFP8995 Features

* -30V/-4.6A,RDS(ON)= 125mΩ@VGS= -10V -30V/-3.6A,RDS(ON)= 165mΩ@VGS= -4.5V Super high density cell design for extremely low RDS (ON) SOT-89-3L package design Application Motor and Load Control LCD TV Inverter & AD/DC Inverter Systems. Backlight Inverter for LCD Display Load Switch CCFL Inverter Pin

AFP8995-Alfa-MOS.pdf

This datasheet PDF includes multiple part numbers: AFP8995, AFP8995-Alfa. Please refer to the document for exact specifications by model.
AFP8995 Datasheet Preview Page 2 AFP8995 Datasheet Preview Page 3

Datasheet Details

Part number:

AFP8995, AFP8995-Alfa

Manufacturer:

Alfa-MOS

File Size:

689.05 KB

Description:

P-channel enhancement mode mosfet.

Note:

This datasheet PDF includes multiple part numbers: AFP8995, AFP8995-Alfa.
Please refer to the document for exact specifications by model.

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TAGS

AFP8995 AFP8995-Alfa P-Channel Enhancement Mode MOSFET Alfa-MOS

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