AS4C1M16S
Features
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- - Fast access time: 5.4ns Fast clock rate: 143 MHz Self refresh mode: standard Internal pipelined architecture 512K word x 16-bit x 2-bank Programmable Mode registers
- CAS Latency: 2, or 3
- Burst Length: 1, 2, 4, 8, or full page
- Burst Type: Sequential or Interleaved
- Burst stop function Individual byte controlled by LDQM and UDQM Auto Refresh and Self Refresh 4096 refresh cycles/64ms CKE power down mode JEDEC standard +3.3V±0.3V power supply Interface: LVTTL 50-pin 400 mil plastic TSOP II package -Pb and Halogen Free
Overview
The AS4C1M16S SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK). Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a...
