Alliance Memory AS4C1M16S-I
The 16Mb SDRAM is a high-speed CMOS synchronous DRAM containing 16 Mbits. It is internally configured as a dual 512K word x 16 DRAM with a synchronous interface (all signals are registered on the positive edge of the clock signal, CLK).| Part No. | AS4C1M16S-I |
|---|---|
| Datasheet | AS4C1M16S-I Download |
| Manufacturer |  Alliance Memory |
| Description | 1M x 16 bit Synchronous DRAM |
| Buy | Stock & Price |
FEATURES
● Fast access time: 5.4/5.4ns● Fast clock rate: 166/143 MHz
● Self refresh mode: standard
● Internal pipelined architecture
● 512K word x 16-bit x 2-bank
● Programmable Mode registers - CAS Latency: 2, or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved - Burst stop function
● Individual byte controlled by LDQM and UDQM
● Auto Refresh and Self Refresh
● 4096 refresh cycles/64ms
● CKE power down mode
● Industrial Temperature: -40~85°C
● JEDEC standard +3.3V0.3V power supply
● Operating temperature range - Commercial (0 ~ 70°C) - Industrial (-40 ~ 85°C)
● Interface: LVTTL
● 50-pin 400 mil plastic TSOP II package -Pb and Halogen Free Overview Each of the 512K x 16 bit banks is organized as 2048 rows by 256 columns by 16 bits. Read and write accesses to the SDRAM are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
