AS1C4M16PL-70BIN 64M CellularRAM AD-MUX Low Power PSEUDO SRAM

Alliance Semiconductor

Description

AS1C4M16PL-70BIN Revision History 64M (4M x 16 bit) CellularRAM AD-MUX Low Power PSEUDO SRAM 49ball FBGA Package Revision Details Rev 1.0 Preliminar.
64M CellularRAM products are high-speed, CMOS pseudo-static random access memory developed for low-power, portable applications.

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Datasheet Specifications

Part number: AS1C4M16PL-70BIN
Manufacturer: Alliance Semiconductor
File Size: 1.63 MB
Datasheet: AS1C4M16PL-70BIN-AllianceSemiconductor.pdf
Description: 64M CellularRAM AD-MUX Low Power PSEUDO SRAM

Features

* - 16-bit multiplexed address/data bus - Single device supports asynchronous and burst operation - Vcc, VccQ voltages: 1.7V-1.95V VCC 1.7V-1.95V VCCQ - Random access time: 70ns - Burst mode READ and WRITE access: 4, 8, 16, or 32 words, or continuous burst Burst wrap or sequential Max clock rate: 108

Applications

* The 64Mb CellularRAM device has a DRAM core organized as 4 Meg x 16 bits. These devices are a variation of the industry-standard Flash control interface, with a multiplexed address/data bus. The multiplexed address and data functionality dramatically reduce the required signal count, and increases

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AS1C4M16PL-70BIN 64M CellularRAM AD-MUX Low Power PSEUDO SRAM Alliance Semiconductor

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