AS4C64M16D1 Datasheet - Alliance Semiconductor

AS4C64M16D1 64M x 16 bit DDR1 Synchronous DRAM

The AS4C64M16D1 is a four bank DDR DRAM organized as 4 banks x 16Mbit x 16. The AS4C64M16D1 achieves high speed data transfer rates by employing a chip architecture that prefetches multiple bits and then synchronizes the output data to a system clock. All of the controls, address, circuits are synch.

AS4C64M16D1 Features

* High speed data transfer rates with system frequency up to 200MHz - Data Mask for Write Control - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 2.5, 3 - Programmable Wrap Sequence: Sequential or Interleave - Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Inter

AS4C64M16D1-AllianceSemiconductor.pdf