AS4C64M16D1
Features
High speed data transfer rates with system frequency up to 200MHz
- Data Mask for Write Control
- Four Banks controlled by BA0 & BA1
- Programmable CAS Latency: 2, 2.5, 3
- Programmable Wrap Sequence:
Sequential or Interleave
- Programmable Burst
Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Interleave Type
- Automatic and Controlled Precharge mand
- Power Down Mode
- Auto Refresh and Self Refresh
- Refresh Interval: 8192 cycles/64 ms
- Available in 66 Pin TSOP II
- SSTL-2 patible I/Os
- Double Data Rate (DDR)
- Bidirectional Data Strobe (DQS) for input and output data, active on both edges
- On-Chip DLL aligns DQ and DQs transitions with CK transitions
- CK
- VDD = 2.5V ± 0.2V, VDDQ = 2.5V ± 0.2V VDD = 2.6V ± 0.1V, VDDQ = 2.6V ± 0.1V (DDR400)
- t RAS lockout supported
- Concurrent auto precharge option is supported
All parts are ROHS pliant
Description
The AS4C64M16D1 is a four bank DDR DRAM organized as 4 banks x 16Mbit x 16. The AS4C64M16D1 achieves high speed data...
