* High speed data transfer rates with system frequency up to 200MHz - Data Mask for Write Control - Four Banks controlled by BA0 & BA1 - Programmable CAS Latency: 2, 2.5, 3 - Programmable Wrap Sequence: Sequential or Interleave - Programmable Burst Length: 2, 4, 8 for Sequential Type 2, 4, 8 for Inter
AS4C64M16D1 Datasheet (5.57 MB)
AS4C64M16D1
Alliance Semiconductor
5.57 MB
64m x 16 bit ddr1 synchronous dram.
AS4C64M16D1 Revision History AS4C64M16D1 66-pin TSOP II package Revision Rev 1.0 Rev 2 Details Preliminary datasheet Speed grade option c.
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