Datasheet Specifications
- Part number
- AS7C34096LL
- Manufacturer
- Alliance Semiconductor
- File Size
- 173.11 KB
- Datasheet
- AS7C34096LL_AllianceSemiconductor.pdf
- Description
- Low Power CMOS SRAM
Description
$GYDQFHLQIRUPDWLRQ )HDWXUHV * * * * * w w w Organization: 524,288 words × 8 bits Intelliwatt™ active po.Features
* FRQWUROOHG tWP WE tWZ Din Dout tDW Data valid tDH ',' $ $//,$1&(6(0,&21'8&725 $6&// ® $GYDQFHLQIRUPDWLRQ 'DWDUHWHQWLRQFKDUDFWHULVWLFV Parameter VDD for data retention Data retention current Operation recovery time Symbol VDR ICCDR tR Test cApplications
* where fast data access, long battery life, and simple interfacing are desired. 65$0 Equal address access and cycle times (tAA, tRC, tWC) of 25/35/55/70/100 ns with output enable access times (tOE) of 10 ns are ideal for high performance applications. Active high and low chip enables (CE) permit eaAS7C34096LL Distributors
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