AS8C801800 Features
* 256K x 36, 512K x 18 memory configurations Supports high system speed:
* 150MHz 3.8ns clock access time
* LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byt
AS8C803600-AllianceSemiconductor.pdf
Datasheet Details
AS8C801800, AS8C803600
Alliance Semiconductor
8.09 MB
3.3v synchronous srams.
This datasheet PDF includes multiple part numbers: AS8C801800, AS8C803600.
Please refer to the document for exact specifications by model.
AS8C801800 Distributor
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