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AS8C803600 3.3V Synchronous SRAMs

AS8C803600 Description

256K X 36, 512K X 18 3.3V Synchronous SRAMs AS8C803600 3.3V I/O, Burst Counter AS8C801800 Pipelined Outputs, Single Cycle Deselect .
The 256K x 36 / 512K x 18.

AS8C803600 Features

* 256K x 36, 512K x 18 memory configurations Supports high system speed:
* 150MHz 3.8ns clock access time
* LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byt

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3.3V Synchronous SRAMs Alliance Semiconductor
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