AS8C803600 Datasheet - Alliance Semiconductor

AS8C803600 - 3.3V Synchronous SRAMs

AS8C803600 Features

* 256K x 36, 512K x 18 memory configurations Supports high system speed:

* 150MHz 3.8ns clock access time

* LBO input selects interleaved or linear burst mode Self-timed write cycle with global write control (GW), byte write enable (BWE), and byt

Datasheet Details

AS8C803600

Alliance Semiconductor

8.09 MB

3.3v synchronous srams.

AS8C803600 Distributor

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