AO3400
Alpha & Omega Semiconductors
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30v n-channel mosfet. Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON
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AO3400 - N-Channel MOSFET
(Kexin)
SMD Type
MOSFIECT
N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400)
Features
VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS.
AO3400 - N-Channel MOSFET
(HOTTECH)
Plastic-Encapsulate Mosfets
FEATURES
The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell den.
AO3400 - 30V N-Channel MOSFET
(JinYu)
30V N-Channel Enhancement Mode MOSFET
VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ.
AO3400 - N-Channel MOSFET
(VBsemi)
AO3400
N-Channel 30-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = 10 V 30
0.033 at VGS = 4.5 V
ID (A)a 6.5 6.
AO3400A - 30V N-Channel MOSFET
(Alpha & Omega Semiconductors)
AO3400A
30V N-Channel MOSFET
General Description
Product Summary
The AO3400A bines advanced trench MOSFET technology with a low resistance packa.
AO3401 - P-Channel MOSFET
(VBsemi)
AO3401-VB
AO3401-VB Datasheet
P-Channel 30 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () Typ.
0.046 at VGS = - 10 V
- 30
0.049 at VGS = - .
AO3401 - 30V P-Channel MOSFET
(Alpha & Omega Semiconductors)
AO3401
30V P-Channel MOSFET
General Description
Product Summary
The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate c.
AO3401 - P-Channel MOSFET
(HOTTECH)
FEATURES
The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
Thi.
AO3401 - P-Channel MOSFET
(Kexin)
SMD Type
P-Channel Enhancement MOSFET AO3401 (KO3401)
MOSFET
■ Features
● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) < 50mΩ (VGS =-10V) ● RDS.
AO3401 - 30V P-Channel MOSFET
(JinYu)
30V P-Channel Enhancement Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1..