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AO3401L - P-Channel MOSFET

Description

The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

AO3401L is offered in a lead free package.

Features

  • VDS (V) = -30V ID = -4.2 A RDS(ON) < 50mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.5V) Oct 2003 TO-236 (SOT-23) Top View G D S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±12 -4.2 -3.5 -30 1.4 1 -5.

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Full PDF Text Transcription

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AO3401, AO3401L (Lead-Free) P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3401L is offered in a lead free package. Features VDS (V) = -30V ID = -4.2 A RDS(ON) < 50mΩ (VGS = -10V) RDS(ON) < 65mΩ (VGS = -4.5V) RDS(ON) < 120mΩ (VGS = -2.
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