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AO3401 - P-Channel MOSFET

Key Features

  • s.
  • VDS (V) =-30V.
  • ID =-4.2 A (VGS =-10V).
  • RDS(ON) ＜ 50mΩ (VGS =-10V).
  • RDS(ON) ＜ 65mΩ (VGS =-4.5V).
  • RDS(ON) ＜ 120mΩ (VGS =-2.5V) D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 G S 0-0.1 +0.10.38 -0.1 1. Gate 2. Source 3. Drain.
  • Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃.

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SMD Type P-Channel Enhancement MOSFET AO3401 (KO3401) MOSFET ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS(ON) ＜ 65mΩ (VGS =-4.5V) ● RDS(ON) ＜ 120mΩ (VGS =-2.5V) D +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 G S 0-0.1 +0.10.38 -0.1 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta = 25℃ Ta = 70℃ Pulsed Drain Current Power Dissipation Ta = 25℃ Ta = 70℃ Thermal Resistance.Junction- to-Ambient t ≤ 10s Thermal Resistance.Junction- to-Ambient Thermal Resistance.