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AO3400 - N-Channel MOSFET

Key Features

  • VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current.
  • Power Dissipation TA=25 TA=70 Thermal Resistance. Junction- to-Ambient Thermal Resistance. Junction- to-Case Junction and Storage Temperature Ran.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type MOSFIECT N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400) Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current * Power Dissipation TA=25 TA=70 Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction and Storage Temperature Range Symbol VDS VGS ID IDM PD RthJA Rthc TJ, TSTG * Repetitive rating, pulse width limited by junction temperature. Rating 30 12 5.8 4.9 30 1.4 1 125 60 -55 to 150 Unit V V A W /W /W 0-0.1 +0.10.38 -0.