AO4456 - N-Channel MOSFET
The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is www.DataSheet4U.com suitable for use as a low side FET in SMPS, load switching and general purpose applications.
Standard Product AO4456 is Pb-f
AO4456 Features
* VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 5.6mΩ (VGS = 4.5V) D S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Powe
