AO4456 - N-Channel MOSFET

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO4456
Manufacturer	Alpha & Omega Semiconductors
File Size	177.50 KB
Description	N-Channel MOSFET
Datasheet	AO4456_AlphaOmegaSemiconductors.pdf

The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.

VDS (V) = 30V ID =20A (VGS = 10V) RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 5.6mΩ (VGS = 4.5V) D S S S G D D D D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead TA=25°C TA=70°C ID.

📁 AO4456 Similar Datasheet

Other Datasheets by Alpha & Omega Semiconductors

Published: Dec 1, 2008 |