AO4458 - N-Channel Enhancement Mode Field Effect Transistor

Alpha & Omega Semiconductors

Datasheet Details

Part number	AO4458
Manufacturer	Alpha & Omega Semiconductors
File Size	152.68 KB
Description	N-Channel Enhancement Mode Field Effect Transistor
Datasheet	AO4458_AlphaOmegaSemiconductors.pdf

The AO4458/L uses advanced trench technology to provide excellent RDS(ON) with low gate charge.

VDS (V) = 30V (VGS = 10V) ID = 20A RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 6.4mΩ (VGS = 4.5V) D S S S G D D D D S G SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Steady State VDS Drain-Source Voltage 30 VGS ±20 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Avalanche Current G Repetitive avalanche energy L=0.3mH Power Dissipation A G B Units V V TA=25°C TA=70°C ID IDM IAR EAR PD TJ, TSTG TA=25°C TA=70°C 20 17 80 50 375 3.1 2.0 -55.

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Published: Jan 11, 2014 |