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AO4707 P-Channel Enhancement Mode Field Effect Transistor

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Description

AO4707 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General .
The AO4707 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

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Datasheet Specifications

Part number
AO4707
Manufacturer
Alpha & Omega Semiconductors
File Size
218.76 KB
Datasheet
AO4707_AlphaOmegaSemiconductors.pdf
Description
P-Channel Enhancement Mode Field Effect Transistor

Features

* VDS (V) = -30V ID = -8A (VGS = -10V) RDS(ON) < 33mΩ (VGS = -10V) RDS(ON) < 56mΩ (VGS = -4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, L

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