AO4916A
Description
The AO4916A uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard product AO4916A is Pb-free (meets ROHS & Sony 259 specifications). AO4916AL is a Green Product .. ordering option. AO4916A and AO4916AL are electrically identical.
Features
Q1
Q2
VDS (V) = 30V VDS(V) = 30V ID = 8.5A (VGS = 10V) ID = 8.5A (VGS = 10V) RDS(ON) < 17mΩ <17mΩ (VGS = 10V) RDS(ON) < 27mΩ <27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D2 D2 G1 S1/A
1 2 3 4
8 7 6 5
G2 D1/S2/K D1/S2/K D1/S2/K
Q1
D1 K
D2
Q2
SOIC8
G1 S1
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain A Current Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C...
