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AO4912 Datasheet Dual N-channel Enhancement Mode Field Effect Transistor

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect.

General Description

The AO4912 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DC-DC converters.

A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4912 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 25mΩ Q2 VDS(V) = 30V ID=7A (VGS = 10V).

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