AO4914 - Dual N-Channel MOSFET

Kexin Semiconductor

Key Features

s N-Channel 1.
VDS (V) = 30V.
ID = 8 A (VGS = 10V).
RDS(ON) ＜ 20.5mΩ (VGS = 10V).
RDS(ON) ＜ 28mΩ (VGS = 4.5V).
VDS (V) = 30V, IF = 3A, VF.

AO4914 dual n-channel mosfet by Kexin Semiconductor - Datasheet Preview

Datasheet Details

Part number	AO4914
Manufacturer	Kexin Semiconductor
File Size	2.84 MB
Description	Dual N-Channel MOSFET
Datasheet	AO4914 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
AO4914	30V Dual N-Channel MOSFET	Alpha & Omega Semiconductors
AO4914	Dual N-Channel FET	VBsemi
AO4914A	Dual N-Channel Enhancement Mode Field Effect Transistor	Alpha & Omega Semiconductors
AO4912	Dual N-Channel Enhancement Mode Field Effect Transistor	Alpha & Omega Semiconductors
AO4912	Dual N-Channel 30V MOSFET	VBsemi

Other Datasheets by Kexin Semiconductor

Part Number	Description
AO4912	Dual N-Channel MOSFET
AO4918	Dual N-Channel MOSFET
AO4900	Dual N-Channel MOSFET
AO4906	Dual N-Channel MOSFET
AO4924	Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SMD Type Dual N-Channel MOSFET AO4914 (KO4914) MOSFET ■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8 A (VGS = 10V) ● RDS(ON) ＜ 20.5mΩ (VGS = 10V) ● RDS(ON) ＜ 28mΩ (VGS = 4.5V) ● VDS (V) = 30V, IF = 3A, VF<0.5V@1A N-Channel 2 ● VDS (V) = 30V ● ID = 8 A (VGS = 10V) ● RDS(ON) ＜ 20.5mΩ (VGS = 10V) ● RDS(ON) ＜ 28mΩ (VGS = 4.5V) ● ESD Rating: 2KV HBM SOP-8 Unit:mm +0.04 0.21 -0.02 1.50 0.15 1 S1/A 2 G1 3 S2 4 G2 5 D2 6 D2 7 D1/K 8 D1/K D1 D2 K G1 G2 A S1 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Schottky Reverse Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Continuous Forward Current Pulsed Diode Forward Current Avalanche Current Repetitive Avalanche Energy Power Dissipation Thermal Resistance.