AO4914 - Dual N-Channel FET

VBsemi

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
Trench Power MOSFET.
100 % UIS Tested.
100 % Rg Tested.
Compliant to RoHS Directive 2002/95/EC.

AO4914 dual n-channel fet by VBsemi - Datasheet Preview

Datasheet Details

Part number	AO4914
Manufacturer	VBsemi
File Size	353.62 KB
Description	Dual N-Channel FET
Datasheet	AO4914 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
AO4914	30V Dual N-Channel MOSFET	Alpha & Omega Semiconductors
AO4914	Dual N-Channel MOSFET	Kexin
AO4914A	Dual N-Channel Enhancement Mode Field Effect Transistor	Alpha & Omega Semiconductors
AO4912	Dual N-Channel MOSFET	Kexin
AO4912	Dual N-Channel Enhancement Mode Field Effect Transistor	Alpha & Omega Semiconductors

Other Datasheets by VBsemi

Part Number	Description
AO4912	Dual N-Channel 30V MOSFET
AO4918	30V Dual N-Channel MOSFET
AO4900	Dual N-Channel MOSFET
AO4906	30V Dual N-Channel MOSFET
AO4930	30V Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

AO4914-VB AO4914-VB Datasheet Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.008 at VGS = 10 V 30 0.012 at VGS = 4.5 V ID (A) 8 6.8 Qg (Typ.