AO4912 - Dual N-Channel MOSFET

Kexin Semiconductor

Key Features

s N-Channel 1.
VDS (V) = 30V.
ID = 8.5 A (VGS = 10V).
RDS(ON) ＜ 17mΩ (VGS = 10V).
RDS(ON) ＜ 25mΩ (VGS = 4.5V).
VDS (V) = 30V, IF = 3A, VF.

AO4912 dual n-channel mosfet by Kexin Semiconductor - Datasheet Preview

Datasheet Details

Part number	AO4912
Manufacturer	Kexin Semiconductor
File Size	2.14 MB
Description	Dual N-Channel MOSFET
Datasheet	AO4912 Datasheet

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SMD Type Dual N-Channel MOSFET AO4912 (KO4912) MOSFET ■ Features N-Channel 1 ● VDS (V) = 30V ● ID = 8.5 A (VGS = 10V) ● RDS(ON) ＜ 17mΩ (VGS = 10V) ● RDS(ON) ＜ 25mΩ (VGS = 4.5V) ● VDS (V) = 30V, IF = 3A, VF<0.5V@1A N-Channel 2 ● VDS (V) = 30V ● ID = 7 A (VGS = 10V) ● RDS(ON) ＜ 26mΩ (VGS = 10V) ● RDS(ON) ＜ 31mΩ (VGS = 4.5V) SOP-8 Unit:mm +0.04 0.21 -0.02 1.50 0.15 1 D2 5 D1/S2/K 2 D2 6 D1/S2/K 3 G1 7 D1/S2/K 4 S1/A 8 G2 D1 K A G1 S1 D2 G2 S2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Schottky Reverse Voltage Continuous Drain Current Pulsed Drain Current TA=25℃ TA=70℃ Continuous Forward Current Pulsed Diode Forward Current Avalanche Current TA=25℃ TA=70℃ Repetitive Avalanche Energy L=0.3mH Power Dissipation Thermal Resistance.