AO4916L, AO4916 Datasheet - Alpha & Omega Semiconductors

AO4916L Dual N-Channel Enhancement Mode Field Effect Transistor

The AO4916 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. A Schottky diode is co-packaged in www.DataSheet4U.com parallel with the synchronous MOS.

AO4916L Features

* VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ (VGS = 10V) RDS(ON) < 27mΩ (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF=0.5V@1A D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K D2 G1 S1 A G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-So

AO4916_AlphaOmegaSemiconductors.pdf

AO4916L Datasheet Preview — This datasheet PDF includes multiple part numbers: AO4916L, AO4916. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

AO4916L, AO4916

Manufacturer:

Alpha & Omega Semiconductors

File Size:

647.24 KB

Description:

Dual n-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: AO4916L, AO4916.
Please refer to the document for exact specifications by model.

AO4916L Distributor

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TAGS

AO4916L AO4916 Dual N-Channel Enhancement Mode Field Effect Transistor Alpha & Omega Semiconductors