AO4918
Description
The AO4918 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous MOSFET to boost efficiency further Standard Product AO4918 is Pb-free (meets ROHS & Sony 259 specifications). AO4918L is a Green Product ordering option. AO4918 and AO4918L are electrically identical.
Features
Q1
Q2
VDS (V) = 30V
VDS(V) = 30V
ID = 9.3A (VGS = 10V) ID=8.3A
RDS(ON) < 14.5mΩ <18mΩ (VGS = 10V)
RDS(ON) < 16mΩ
<27mΩ (VGS = 4.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D1
D2
D2 1 8 G2 D2 2 7 D1/S2/K G1 3 6 D1/S2/K S1/A 4 5 D1/S2/K
SOIC-8
Q1
Q2
A G1
S1
G2 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max Q1 Max Q2
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain TA=25°C
Current A
TA=70°C
Pulsed Drain Current...
