AO4918A
Description
The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a pact and efficient switch and synchronous rectifier bination for use in DCDC converters. A Schottky diode is co-packaged in .. parallel with the synchronous MOSFET to boost efficiency further. AO4918A is Pb-free (meets ROHS & Sony 259 specifications). AO4918AL is a Green Product ordering option. AO4918A and AO4918AL are electrically identical.
Features
Q1
VDS (V) = 30V ID = 9.3A RDS(ON) < 14.5mΩ RDS(ON) < 16mΩ
Q2
VDS(V) = 30V ID=8.5A <18mΩ (VGS = 10V) <27mΩ (VGS = 4.5V)
SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A
D1 D2 D2 G1 S1/A 1 2 3 4 8 7 6 5 G2 D1/S2/K D1/S2/K D1/S2/K K
D2
Q1
G1 S1 A
Q2
G2 S2
SOIC-8 Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TA=25°C Current A ID TA=70°C Pulsed Drain Current B TA=25°C TA=70°C Power Dissipation Junction and Storage...
