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AO4918A Dual N-Channel Enhancement Mode Field Effect Transistor

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Description

AO4918A Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General .
The AO4918A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

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Datasheet Specifications

Part number
AO4918A
Manufacturer
Alpha & Omega Semiconductors
File Size
174.82 KB
Datasheet
AO4918A_AlphaOmegaSemiconductors.pdf
Description
Dual N-Channel Enhancement Mode Field Effect Transistor

Features

* Q1 VDS (V) = 30V ID = 9.3A RDS(ON) < 14.5mΩ RDS(ON) < 16mΩ Q2 VDS(V) = 30V ID=8.5A

Applications

* OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Lt

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